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APT12045L2VFR
1200V 28A 0.450
POWER MOS V (R)
Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V(R) also achieves faster switching speeds through optimized gate layout.
TO-264 Max
* Faster Switching * Lower Leakage
* Avalanche Energy Rated * TO-264 MAX
G
FREDFET
D
S
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Pulsed Drain Current
1
All Ratings: TC = 25C unless otherwise specified.
APT12045L2VFR UNIT Volts Amps
1200 28 112 30 40 833 6.67 -55 to 150 300 28 50
4
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Volts Watts W/C C Amps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
3200
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) Drain-Source On-State Resistance
2
MIN
TYP
MAX
UNIT Volts
1200 0.450 250 1000 100 2 4
(VGS = 10V, ID= 14A)
Ohms A nA Volts
4-2004 050-5844 Rev A
Zero Gate Voltage Drain Current (VDS = 1200, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 960V, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 5mA)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss Crss Qg Qgs Qgd t d(on) tr t d(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
APT12045L2VFR
Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 600V ID = 28A @ 25C VGS = 15V VDD = 600V ID = 28A @ 25C RG = 0.6 MIN TYP MAX UNIT pF
11370 950 495 605 42 310 16 15 85 14
ns nC
Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol IS ISM VSD
dv/ dt
Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage Peak Diode Recovery
1 2 dt
MIN
TYP
MAX
UNIT Amps Volts V/ns ns C Amps
28 112 1.3 18
Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
(Body Diode) (VGS = 0V, IS = -ID 28A)
5
dv/
t rr Q rr IRRM
Reverse Recovery Time (IS = -ID 28A, di/dt = 100A/s) Reverse Recovery Charge (IS = -ID 28A, di/dt = 100A/s) Peak Recovery Current (IS = -ID 28A, di/dt = 100A/s)
310 625 2 6 14 24
THERMAL CHARACTERISTICS
Symbol RJC RJA Characteristic Junction to Case Junction to Ambient MIN TYP MAX UNIT C/W
0.15 40
1 Repetitive Rating: Pulse width limited by maximum junction
3 See MIL-STD-750 Method 3471 4 Starting T = +25C, L = 8.16mH, R = 25, Peak I = 28A temperature. j G L 2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2% 5 I I [Cont.], di/ = 100A/s, T 150C, R = 2.0 V = 200V. S D j G R dt APT Reserves the right to change, without notice, the specifications and information contained herein.
0.16
, THERMAL IMPEDANCE (C/W)
0.14 0.12
0.9
0.7 0.10 0.08 0.06 0.3 0.04 0.02 0 10-5 0.1 0.05 10-4 SINGLE PULSE 0.5
Note:
PDM t1 t2 Peak TJ = PDM x ZJC + TC Duty Factor D = t1/t2
4-2004
050-5844 Rev A
Z
JC
10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
10
Typical Performance Curves
ID, DRAIN CURRENT (AMPERES)
RC MODEL
60 50
APT12045L2VFR
VGS =15V, 10V, 8V & 6V 5.5 5V
Junction temp. (C)
0.0367
0.0627F
40 30 20 10 4V 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.4
V
Power (watts)
0.0923
0.761F
4.5V
0.0215 Case temperature. (C)
50.8F
0
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
VDS> ID (ON) x RDS(ON) MAX. 250 SEC. PULSE TEST @ <0.5 % DUTY CYCLE
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
80
ID, DRAIN CURRENT (AMPERES)
70 60 50 40 30 20 10 0
1.3 1.2 1.1 1.0 0.09 0.08
GS
NORMALIZED TO = 10V @ I = 14A
D
TJ = -55C TJ = +25C TJ = +125C
VGS=10V
VGS=20V
0 1 2 3 4 5 6 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS
0
30 25 20 15 10 5 0
BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED)
10 20 30 40 50 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT
1.15 1.10 1.05 1.00 0.95 0.90 0.85
ID, DRAIN CURRENT (AMPERES)
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED)
50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 2.5
I V
D
25
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 1.1 1.0 0.9 0.8 0.7 0.6
-50
= 14A = 10V
2.0
1.5
1.0
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
GS
0.5
0.0 -50
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, RDS(ON) vs. TEMPERATURE
-25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
-50
050-5844 Rev A
4-2004
Typical Performance Curves
112 50
OPERATION HERE LIMITED BY RDS (ON)
APT12045L2VFR
50,000 100S
C, CAPACITANCE (pF)
ID, DRAIN CURRENT (AMPERES)
10,000 5,000
Ciss
10 5 TC =+25C TJ =+150C SINGLE PULSE
1mS
1,000 500
Coss Crss
10mS 100
1
1 5 10 50 100 500 1200 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA
I
D
0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
IDR, REVERSE DRAIN CURRENT (AMPERES)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
12
= 28A
200 100 50 TJ =+150C TJ =+25C 10 5
10 VDS=240V 8 VDS=600V 6 4 2 0 VDS=960V
100 200 300 400 500 600 700 800 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE
0
0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
1
TO-264 MAXTM(L2) Package Outline
4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 19.51 (.768) 20.50 (.807)
5.79 (.228) 6.20 (.244)
Drain
25.48 (1.003) 26.49 (1.043)
2.29 (.090) 2.69 (.106)
2.29 (.090) 2.69 (.106)
4-2004
19.81 (.780) 21.39 (.842)
Gate Drain Source
050-5844 Rev A
0.48 (.019) 0.84 (.033) 2.59 (.102) 3.00 (.118)
0.76 (.030) 1.30 (.051) 2.79 (.110) 3.18 (.125) 5.45 (.215) BSC 2-Plcs.
Dimensions in Millimeters and (Inches)
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.

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